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vor 9 Jahren

10-2013

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HF-Praxis 10/2013

RF & Wireless Components

RF & Wireless Components New DRO Series VCOs with Electrical Tuning 8 to 12 GHz Z-Communications, Inc. has raised performance standards to new heights through the introduction of the DRO Series of high performance oscillators. DRO oscillators are sure to meet the demands of any Up/Down Converter system requiring an ultra-low phase noise LO solution. The DRO Series of high frequency oscillators use high-Q dielectric resonators and are currently available at 8 to 12 GHz. The electrical tuning option for the DRO operating at 10 GHz has a control range of 0-12 V DC , providing ultra-fine tuning precision. The electrical tuning provides ±3 MHz of frequency control allowing the oscillator to be quickly and easily phaselocked. DRO Series oscillators provide a low phase noise and an exceptional spectral purity as good as -110 dBc/Hz, typically, at 10 kHz from the carrier. DROs minimize power consumption by operating off a 5 Vdc bias while drawing only 20 mA, typically, and are available in a surface mount packages measuring 0.91 x 0.91 x 0.40 inches. For rugged applications, DROs are available in a connectorized metal enclosure measuring 1.25 x 1.25 x 0.85 inches. In addition to the superior phase noise performance and electrical tuning advantage, the DRO series oscillators deliver 0±3 dBm of output power into a 50 MACOM Announces New Versatile, Broadband and Low Cost Wideband Amplifier The MAAM-011109 is an innovative solution for customers who need a versatile, ultrabroadband packaged amplifier for IMS, Point to Point, Test & Measurement, Electronic Warfare and Aerospace and Defense applications. The device is packaged in a convenient 5 mm x 5 mm laminate package, while providing superior 10 MHz to 40 GHz continuous performance over its nearest alternatives. The MAAM-011109 provides a simple and easy solution for a variety of applications by fully integrating the bias network, power detection and gain control. The MAAM-011109 offers an excellent combination of broadband performance, ease of use and low cost, said Tom Galluccio, Product Manager. The MAAM-011109 is ideally suited for any application that that requires 50 Ohm gain performance from 10 MHz to 40 GHz. It is useful to customers in applications where the incoming signal varies over a broad bandwidth, specifically - laboratory, instrumentation, and defense applications. This device is housed in a leadless 5 x 5 x 1.3 mm package that can be handled and placed with standard pick and place assembly equipment. The package base is a two layer laminate with overmold fully compatible with PCB ohm load. DROs are designed to operate over the industrial temperature range of -40 to 85 °C making them a good fit for the toughest environmental applications. These exceptional devices will enhance any PLL control system due to their low tuning sensitivity figure of approximately 1 MHz/V. The DRO Series oscillators have second harmonic attenuation of better than -25 dBc. The pushing specification for the 10 GHz DRO is less than 1 MHz/V within a 5% change of the supply voltage while pulling is less than 2 MHz with a 12 dB return loss, any phase. ■ Z-Communications www.zcomm.com environment and wash conditions. The device includes a GaAs MMIC that is fully passivated providing the customer excellent performance and reliability. MACOM Technology Solutions Announces New Solder-able Flip Chip Varactor M/A-COM Technology Solutions Inc. announced a new broadband general purpose varactor diode for Multi-market applications. The MAVR-000120-1411 is designed for customers who need a versatile, low cost, ultra-small varactor solution for Police Radar, Point to Point, Electronic Warfare and Aerospace and Defense applications. The device is a package-less varactor with contacts that allows for standard solder reflow manufacturing processes. Unlike its nearest alternatives, the MAVR-000120-1411 is fabricated using a GaAs process which provide customers full passivation for increased performance and reliability. The constant gamma varactor is designed for tuning capacitance in the 2-12 V range. The low parasitic capacitance and inductance allow for operation up to 30 GHz. „This Flip-Chip is a high frequency GaAs varactor suitable for VCO applications where high Q operation is critical to design performance“ said Paul Wade, Product Manager. ■ MACOM Technology Solutions www.macomtech.com 76 hf-praxis 10/2013

RF & Wireless Components 1500 to 2300 MHz Dual LNA TriQuints´s TQP3M9040 is a high linearity, ultra low noise figure dual device amplifier in a 4x4 mm package. At 1950 MHz in a balanced configuration, this LNA provides 17.7 dB gain, 21.8 dBm IIP3 and 0.62 dB noise figure. The part does not require a negative supply for operation and is bias adjustable for both drain current and voltage. The device is housed in a green/RoHS-compliant industry standard QFN package. The TQP3M9040 consists of a single monolithic GaAs E-pHEMT die and integrates bias circuitry as well as shutdown capability allowing the LNA to be useful for both FDD and TDD applications. The TQP3M9040 is optimized for the 1500-2300 MHz band, but can be used outside of the band. TriQuint offers pin-compatible dual LNAs for the 500- 1500 MHz band (TQP3M9039) and 2.3-4.0 GHz (TQP3M9041). The balanced amplifier is optimized for high performance receivers in wireless infrastructure and can be used for basestation transceivers or towermounted amplifiers. • Base Station Receivers • Tower Mount Amplifiers • Balanced Amplifiers • F D D - LT E , T D D - LT E , WCDMA, CDMA, GSM • General Purpose Wireless • 0.18 dB NFmin (Single Channel) at 1950 MHz • 1500-2300 MHz operational bandwidth • Gain = 18 dB at 1950 MHz • +21.8 dBm Input IP3 • Integrated shut-down biasing feature • Bias adjustable • Does not require negative voltage supply • 4x4 mm 16-pin QFN plastic package ■ Triquint Semiconductor, Inc. www.triquint.com 35 W, 32 V, DC – 3.5 GHz, GaN RF Power Transistor The TriQuint T1G4003532-FS is a 37 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.25 µm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and RoHS compliant. Applications: • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers • Frequency: DC to 3.5 GHz • Output Power (P3dB): 37 W at 3.5 GHz • Linear Gain: >16 dB at 3.5 GHz • Operating Voltage: 32 V • Low thermal resistance package ■ TriQuint www.triquint.com High Performance QFN I/Q Mixers for X-Band & 24 GHz Applications Hittite Microwave Corporation has launched two high performance GaAs MMIC I/Q mixers which further complement Hittite’s extensive mixer product portfolio while providing frequency coverage for a broad range of applications spanning 8 to 28 GHz. The HMC1063LP3E and the HMC1056LP4BE are GaAs MMIC I/Q mixers in compact leadless “Pb free” SMT packages, which can be used as either image reject mixers or as single sideband upconverters. The mixers utilize two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs Schottky diode process. A low frequency quadrature hybrid is used to produce a 1000 MHz LSB IF output. Ideal for point-to-point and point-to-multipoint radios, the HMC1056LP4BE I/Q mixer operates from 8 to 12 GHz, supports an IF bandwidth from DC to 4 GHz and features 25 dBc of image rejection. The HMC1056LP4BE mixer also features high input IP3 of 18 dBm, while LO to RF isolation is typically 40 dB. The HMC1063LP3E is ideal for 24 GHz sensor applications and operates from 24 to 28 GHz with a DC to 3 GHz IF bandwidth. The HMC1063LP3E also provides 21 dBc of image rejection and a high input IP3 of 17 dBm. LO to RF isolation is typically 40 dB. Both operate with low LO power of 10 dBm and may be used for military radar, EW, ELINT and satellite communications applications. These I/Q mixers are a much smaller alternative to hybrid style image reject mixers and single sideband upconverter assemblies eliminate the need for wire bonding and facilitate the use of surface mount manufacturing techniques. Hittite Microwave Corporation www.hittite.com hf-praxis 10/2013 77

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