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Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik

RF & Wireless News

RF & Wireless News Pasternack Enters a Private-Label Agreement with Ducommun Incorporated Pasternack Enterprises Inc. has signed an agreement with Ducommun Incorporated, to private-label manufacture select Ducommun RF products under the Pasternack brand. This new partnership provides customers with urgent RF product needs access to a greater offering of industry-leading components through Pasternack with 24/7 sales support, online purchasing and same-day shipping. Under the terms of this private-label agreement, Pasternack will now offer greater selections of in-stock and ready to ship portfolios of coaxial electromechanical switches, PIN diode switches, various waveguide components, as well as millimeter wave amplifiers. “In an effort to better support both our current and new development customers, we want our products to be conveniently available, and Pasternack offers them easy, around-the-clock access,” said Anthony J. Reardon, chairman and chief executive officer of Ducommun. “In addition, the agreement expands Ducommun’s reach to RF customers in such industries as medical, research and development, and colleges and universities.” “At Pasternack, our goal is to serve as the RF engineer’s single source for urgently needed RF products around the globe,” says Terry G. Jarnigan, Chief Executive Officer at Pasternack. “Our partnership with Ducommun expands Pasternack’s already vast selection of in-stock RF products, while ensuring we continue to maintain the components engineer’s need when they need them.” ■ Pasternack www.pasternack.com Components High-Power Receive Protection Circuit Limiters Richardson RFPD announced the availability and full design support capabilities for two new high-power receive protection circuit limiters from Qorvo. Using Qorvo’s passive GaAs VPIN technology, the new devices do not require bias and are offered in small plastic overmold packages. This simplifies system integration while maximizing performance and protection. The limiters are ideal for commercial and military radar applications, communications systems and electronic warfare where protecting sensitive receive components from damage is critical. ■ RFMW Ltd. www.rfmw.com Flexible/Twistable Waveguides Operate to 40 GHz Over Nine Frequency Bands Pasternack expands their waveguide product portfolio with the addition of new flexible waveguides that operate up to 40 GHz over nine frequency bands. This offering consists of 36 unique models of flexible waveguide twists ranging in size from WR-137 (as low as 5.85 GHz) to WR-28 (up to 40 GHz). Pasternack’s flexible/twistable waveguides, also referred to as a “flexguide”, utilize helically wound silver coated brass strips surrounded by a flexible and twistable, yet durable, neoprene sleeve. The ends of the waveguide are terminated with brass flanges available in nine waveguide sizes and multiple flange styles. Typical VSWR for these flexible waveguides ranges from 1.05:1 up to 1.35:1 depending on waveguide size and frequency. Insertion loss performance is similar with typical levels as low as 0.07 dB. These waveguides will flex in both the E and H planes and can also twist. Flanges in lower frequency versions are available in both UG and CPR styles. The new flexible waveguides sections from Pasternack act as a malleable conduit in waveguide systems where there is not perfect alignment for a traditional rigid waveguide section. Often an ideal solution for test labs or prototyping, these flexible waveguides can easily be flexed and twisted to conform to various misalignments in waveguide systems. These flexible waveguide twists can be ordered in standard lengths including 12, 24 and 36 inches with same-day shipping. The new flexible waveguide twists from Pasternack are in-stock and ready to ship now. ■ Pasternack www.pasternack.com GaN RF Power Transistors in 10 to 200 W Ratings Ampleon announced the extension of its portfolio of GaN RF power transistors based on a 0.5 µm HEMT process technology. Comprising 10, 30, 50 and 100 W devices, over ten transistors are currently available suitable for multiple applications such as drivers up to C band, through to 100 and 200 W push-pull packages for use in final stages up to S band. Housed in a compact and thermally stable ceramic package, the whole CLF1G family of devices are ideal for use in a broad range of applications that need to meet specific requirements of SWaP (size, weight and power). Optimized for best in class linearity, power efficiency, and broadband power performance, Ampleon’s GaN devices are available with electrical models, reference designs and demonstration boards. Typical applications include use in commercial aviation and radar applications, aerospace and defence systems, and broadband solutions. Devices available include the CLF1G0035S-50, a broadband 50 W amplifier capable of operation from DC through to 3.5 GHz that is designed for operation up to 50 V and having excellent VSWR (ruggedness) capabilities of 10:1. 100 W devices have just been released. Being a European supplier, Ampleon is a so called ITARfree (International Traffic in Arms Regulations) supplier, a factor that is appreciated by its customers in the worldwide A&D marketplace.Together with a line-up of reliable and cost effective LDMOS-based RF power transistors, the GaN portfolio complements and strengthens Ampleon’s RF power offerings to its customers, helping them to bring better solutions to market. ■ Ampleon www.ampleon.com 50 hf-praxis 2/2016

RF & Wireless Components Low Profile MEMS Filter Range and Filters Shortform Catalogue Euroquartz has launched a new range of low profile MEMS (Micro ElectroMechanical System) filter products offering major benefits of small size and very low profile making them ideal for use in embedded applications. The company has also published a new four page shortform catalogue covering its new MEMS filters and traditional RF filter ranges. Using the latest MEMS technology, it is possible to produce bandstop and bandpass filter products that offer a very low profile (0.5 mm) solution. The advantages of Euroquartz MEMS filters are their small size offering high reliability and high performance, covering the range from 2 to 50 GHz. MEMS filter types available include bandpass, bandstop, lowpass, attenuator New 2.4 GHz WLAN/BT LTE Coexistence Filter Richardson RFPD Inc. announced the availability and full design support capabilities for a new 2.4 GHz WLAN/BT LTE coexistence filter from Qorvo: The 885128 is a high-performance, high-power bulk acoustic wave (BAW) band-pass filter with extremely steep skirts. It simultaneously exhibits low loss in the WiFi band and high near-in rejection in the approximate LTE bands. The new BAW filter is specifically designed to enable coexistence of WiFi and LTE signals within the same device or in close proximity to one another. chip, time-delay line, substrate integrated waveguide (SIW) and micro-shielding. Offering a 1 dB insertion loss with 30 dB at 3 and 7.5 GHz attenuation they are ideal for microwave communication equipment such as base stations, wireless transceiver systems and small size RF front-end requirements. The new shortform catalogue provides basic specifications for a selection of the MEMS bandpass filters alongside discrete crystal filter designs, surface mount monolithic crystal filters and bandpass LC filter designs. Euroquartz custom LC and microwave filters offer a broad selection of frequencies, topologies and packages ranging from audio to 3 GHz and up to 200 W in power. Topologies include low pass, band pass, high pass and band reject. Special characteristics such as IM distortion, phase and amplitude match etc. are optimised during manufacturing. LC filters are available in a variety of packages including SMD and are compatible with modern automated manufacturing processes. Euroquartz also offers a wide range of cavity filters in band pass and notch types. A notch type filter attenuates a narrow band of frequencies while allowing all other frequencies to pass with only a slight loss. Band pass filters pass a narrow band of frequencies with very little loss while attenuating all other signals outside of the band. Cavity filters are available up to 960 MHz with any type of customer-specific connector and are factory tuned to the frequencies requested. ■ Euroquartz Ltd. www.euroquartz.co.uk The filter exhibits excellent power handling capabilities and is offered with an industry-leading 1.1 x 0.9 x 0.50 mm small footprint. It is ideally suited for small cell, portable hotspots, WiFi routers and LTE gateways, smart meters, and WiFi access points applications. ■ RFMW Ltd., www.rfmw.com News 200 mm GaN-on-Si Technology Closer to Manufacturing Imec presented three novel aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) stacks featuring optimized low dispersion buffer designs. Moreover, imec optimized the epitaxial p-GaN growth process on 200 mm silicon wafers, achieving e-mode devices featuring beyond state-of-the-art high threshold voltage (Vt) and high drive current (Id). To achieve a good, current-collapsefree device operation in AlGaN/GaNon-Silicon (Si) devices, dispersion must be kept to a minimum. Trapped charges in the buffer between the GaN-based channel and the silicon substrate are known to be a critical factor in causing dispersion. Imec compared the impact of different types of buffers on dispersion and optimized three types: a classic step-graded buffer, a buffer with low-temperature AlN interlayers, and a super lattice buffer. These three types of buffers were optimized for low dispersion, leakage and breakdown voltage over a wide temperature range and bias conditions. Imec also optimized the epitaxial p-GaN growth process demonstrating improved electrical performance of p-GaN HEMTs, achieving a beyond state-ofthe-art combination of high threshold voltage, low on-resistance and high drive current. The P-GaN HEMT results outperformed their MISHEMT counterparts. Imec’s GaN-on-Si R&D program aims at bringing this technology towards industrialization. Imec’s offering includes a complete 200 mm CMOS-compatible 200 V GaN process line that features excellent specs on e-mode devices. Imec’s program allows partners early access to next-generation devices and power electronics processes, equipment and technologies, and speed up innovation at shared costs. Current R&D focuses on improving the performance and reliability of imec’s e-mode devices, while in parallel pushing the boundaries of the technology through innovation in substrate technology, higher levels of integration and exploration of novel device architectures. ■ Imec www.imec.be hf-praxis 2/2016 51

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