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vor 2 Jahren

1-2022

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  • 6g technologie
  • 5g technologie
  • Rf wireless
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  • Lwl technik
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Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik

RF & Wireless RFMW

RF & Wireless RFMW introduces new products High-Performance Filter WLAN FEM Integrates SP3T resolution spanning 360° and 26 dB of dynamic range, enabling precise beam pattern and polarization control. 100 Watt X-Band Limiter ents are required, thereby easing PCB design and implementation. High Power Ceramic Filter for Band 41 MIMO RFMW announced design and sales support for a high performance filter from Qorvo. The QPQ4900 is a compact, bulkacoustic wave (BAW) band pass filter with 4920 MHz center frequency and 160 MHz bandwidth for Sub-Band n79 applications in TDD small cell base stations, base station infrastructure, repeaters and boosters. The QPQ4900 insertion loss is 1.4 to 1.9 dB (typical) with high out-of-band attenuation of WiFi signals. Offered in a 2 x 1.6 mm package. 2-in-1 Combination Antenna for LTE and GNSS RFMW announced design and sales support for a unique antenna from Unictron (formerly Sanav). The Unictron MT4B- AC-BL03 is a 2-in-1 LTE/ GNSS combination featuring a single LTE antenna covering 698 to 2690 MHz and an active GNSS antenna covering GPS, Beidou and Glonass L1 bands. The GNSS antenna offers 27 dB peak gain and out of band suppression up to 55 dB. The MT4B- AC-BL03 is screw mounted with base launch cables and is IP67 rated for external use. It is fitted with 2 x 5 meter cables and SMA Male connectors, making it ideal for fleet management and telematics applications. Customer specific cable lengths and connector options are available upon request. RFMW announced design and sales support for a Skyworks Frontend Module (FEM) designed for automotive connectivity. Targeting 2.4 to 2.5 GHz 802.11n/ac applications in automotive infotainment and telematics, the SKYA21040 integrates a single-pole, triple-throw (SP3T) switch and low-noise amplifier (LNA) with a bypass mode in an ultra-compact package. The device is capable of switching between WLAN receive, WLAN transmit, and Bluetooth. Receive gain is 14 dB with 1.9 dB noise figure. The SKYA21040 is provided in a small Dual Flat No- Lead(DFN) 8-pin, 1.5 x 1.5 mm package. 16-Channel Ku-Band Beamformer RFMW announced design and sales support for an active beamforming RFIC from Renesas. The F6123S is a sixteen-channel, dual-beam receive active beamforming RFIC designed for application in Ku/CDL-Band (14 to 17 GHz) planar phased array antennas. The IC has eight RF input ports, two RF output ports and 16 (8 per beam) phase/ amplitude control channels. The eight input ports of the F6123S may be driven by eight single-polarized elements or four dual-polarized elements of an electronically scanned array (ESA). Each channel has 6-bits of digital phase and gain control RFMW announced design and sales support for a power limiter from Qorvo. The QPP0100 VPIN limiter provides flat leakage of 21 dBm with up to 100 W peak pulsed power handling from 8 to 11.5 GHz. With exceptionally low insertion loss (1 dB) over a wide bandwidth, it requires no DC bias. Recovery time is

1 Features BLF188XR ART1K6 ART2K0 www.ampleon.com | ART (Advanced Rugged Technology) Whitepaper Competitive LDMOS Competitive VDMOS V DS (Max) Volts 50 55 65 65 50 RF Power (Watts) 1400 1400 2000 1800 800 Min BV DSS (Volts) 135 177 203 179 170 Coss @ V DS (Typ) pF 213 193 181 203 1000 VSWR Withstand 65:1 65:1 65:1 65:1 70:1 Swing Voltage / Safety Margin 2.7 3.5 3.1 2.8 3.4 Fig. 1: Comparison of rugged 50 V / 65 V Si LDMOS in comparison to Si VDMOS RF & Wireless at its operating range of 1150 MHz. V CC is 5 Volts while the tuning voltage range is 1 to 11 V. Typical output power is 0 dBm. Packaged in a standard 0.5 x 0.5 inch castellated SMT, the APA Wireless R1150SMUA5CR is a form/fit/function replacement for the EOL Qorvo UMX-1065- D16-G. Waterproof Monopole Whip Antenna RFMW announced design and sales support for a Southwest Antennas’ monopole whip antenna. The 1000-046 omnidirectional antenna operates from 330 to 360 MHz with a peak gain of 2 dBi. This flexible antenna features a tough, braided aircraft wire element with a sealed heat shrink exterior and fully potted and waterproof base containing the antenna’s matching components. The resulting antenna is rugged for use in harsh environments yet is flexible enough to bend if the whip is impacted by another object. The 1000-046 features a BNC male connector for attachment. 6 Watt mMIMO Driver Amplifier RFMW announced design and sales support for an unmatched, single-stage amplifier from Qorvo. The QPD0005M GaN power transistor supports driver amplifier applications for massive MIMO Doherty configurations from 2.5 to 5 GHz. A 6 Watt P sat device, it provides 18.6 dB of P3dB gain with 74% power added efficiency in a 48 V system. The QPD0005M is available in a small, 4.5 x 4 mm DFN package. High Linearity GaAs MESFET RFMW announced availability of discrete devices from Microwave Technology (MwT). The MwT-7F GaAs MESFET delivers 21 dBm P1dB at 12 GHz and is ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range. Small signal gain is 15 dB. Offered in a 365 x 250 micron chip, the MwT-7F can be used in military and hi-rel SWaP designs and is also available in multiple packaged configurations, all with MTBF values better than 10 8 hours at 150 °C channel temperature. PolyStrata Architecture improves SWaP RFMW announced design and sales support for mmWave, surface mount filters from Cubic Nuvotronics. The PSF29B02S interdigital filter has a pass band of 27.5 to 30 GHz with 50 ohms characteristic impedance. Handling a maximum input power of 2 Watts, this SMT filters’ low insertion loss is 1 dB max. and boasts 64 dB lower bandpass rejection and 47 dB upper bandpass rejection. Poly- Strata technology provides wide bandwidth, exceptional filtering performance and minimal partto-part variation for consistent results in production environments supporting 5G backhaul, satellite communications, RF telemetry, and instrumentation. RoHS compliant, PSF29B02S filters are available on tape and reel for standard SMT process assembly. Ruggedized LDMOS White Paper ART (Advanced Rugged Technology) White Paper Ampleon’s advancements with ruggedized Si LDMOS transistors of up to 2 kW of RF Power for 1 through 400 MHz Tom Dekker, Director Marketing, Multi-Market AMEC Overview Ampleon recently released a series of rugged transistors, engineered specifically for the industrial, scientific and medical applications which offer robust VSWR ruggedness withstand while delivering the best in terms of RF power, gain and efficiency. We named this series “ART”, short for “Advanced Rugged Transistor”. ART’s novel Silicon LDMOS node was engineered to obtain a high drain-source breakdown while maintaining a compelling low output capacitance to allow for a rugged transistor with high transconductance in the frequency range from HF through UHF. The ART series has two versions: ART1K6 (50 V V DS / 177 V V DS minimum breakdown) and ART2K0 (65 V V DS / 200 V V DS minimum breakdown range). The high VDS breakdown offers the threshold for VSWR ruggedness features during 65:1 withstand conditions. Further, the low output capacitances allow for frequency ranges of up to 450 MHz with high gain and efficiency. The chart below provides a comparison of features to our popular BLF188XR (current generation in high volume production) and provides some perspective on comparison to the competitive landscape of devices. The ART1K6 and ART2K0 are offered in industry standard packages, either air-cavity ceramic or over-mold plastic packages suitable for attach direct to an amplifier heatsink or copper-coin planar with PCB with gull-winged packages. Class-E designs are enabled at 50 V for ART2K0. Device is within all operating limits of up to 6dB compression. Testing underway to extend Class E operation at 50 V to 10 dB compression. All ART Family devices have an internal stability network contained in the die. This network results in close to unconditional small signal stability at low frequency without the need for any external circuitry. RFMW announced availability of a white paper from Ampleon: “ART (Advanced Rugged Technology)”. The paper describes Ampleon’s advancements with ruggedized Si LDMOS transistors of up to 2 kW of RF Power for 1 through 400 MHz applications. ART technology was engineered to obtain a high drain-source breakdown while maintaining a compelling low output capacitance to allow for a rugged transistor with high transconductance in frequency ranges from HF through UHF. The white paper includes product details and reference design information. ■ RFMW www.rfmw.com Richardson Continues Expansion of 5G and Wireless, Test & Measurement Capabilities with Maury Microwave Richardson Electronics, Ltd. announced a new global distribution agreement with Maury Microwave. Since its founding in 1957, Maury Microwave has served as a trusted technology solutions partner to many of the world‘s leading manufacturers in the wireless technology chain, including companies serving RF demand in defense, space, and commercial markets. Maury’s comprehensive suite of solutions span frequencies from RF through terahertz and include calibration, measurement, modeling, and interconnect technologies. Its broad range of products covers a broad range of requirements from measurement and modeling device characterization solutions for semiconductor technology development to cable assemblies and adapters designed to reduce measurement uncertainties and deliver confidence in measurements and models. „Maury’s history of continuous innovation and strong service mindset correlate with our strategy of bringing disruptive technologies to market. Our mutual customers can count on our unwavering commitment to performance, service, and innovation,“ stated Richardson’s Greg Peloquin, Executive Vice-President, Power and Microwave Technologies Group. „Our partnership with Richardson Electronics will help empower us to support our customers with their test challenges,” said Steven Harris, Vice President, Sales at Maury Microwave. “We look forward to this close collaboration and expanding our global reach for the benefit of the entire RF community.” ■ Richardson Electronics, Ltd. www.rell.com hf-praxis 1/2022 37

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