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vor 7 Jahren

9-2016

  • Text
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  • Radio
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  • Antenna
  • Frequency
  • Wireless
Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik

RF & Wireless Components

RF & Wireless Components Bluetooth Low-Energy SoC for Automotive Applications Nordic Semiconductor announced the immediate availability of the nRF51824 Bluetooth low energy (formerly Bluetooth Smart) SoC for the latest connected car intelligent automotive applications and wireless in-car charging. The nRF51824 is qualified to the automotive AEC-Q100 stress test qualification for integrated circuits, and delivers the same flexible feature range and performance as Nordic’s highly successful and field-proven nRF51822 Bluetooth low energy SoC (256 kB Flash and 16 kB RAM variant) upon which the nRF51824 is based. “The world of automotive is evolving rapidly towards the emergence of the connected car, and connected in-car ecosystems” says John Leonard, Product Marketing Manager at Nordic Semiconductor. “This will expand from Bluetooth enabled smartphones and tablets being wirelessly linked to in-car user interfaces and audio systems to having a vast array of other factory-fitted elements being made wirelessly control lable and configurable. “This will lead to connected in-vehicle ecosystems that contain ‘swarms of wireless sensors’ for driving experience enhancement, safety, and diagnostics. Examples will include intelligent seats, intelligent steering wheels, remote keyless entry [RKE] systems, intelligent mirrors, infotainment systems, and intelligent accident or incident proximity reporting. It also brings exciting opportunities for after-market equipment suppliers to deliver innovative in-car systems that communicate with each other and with smart mobile devices. The nRF51824 is the world’s most powerful automotive qualified Bluetooth low energy SoC and as such is very well suited to these application demands.” The nRF51824 is sampling now and is supplied in a 6 x 6 mm 48-pin QFN package. ■ Nordic Semiconductor www.nordicsemi.com Dual Matched-Pair LNA Targets Balanced Amps 2.8 - 3.2 GHz 50 Watt GaN Amplifier • Pout >47 dBm (Pin 25 dBm) • signal gain >22 dB (Pin 25 dBm) • PAE > 58% (Pin 25 dBm) • Bias VD 25V, IDQ 200 mA, VG 2.8 V (typical) • Supports long pulse operation • Package 7 x 7 x 0.85 mm ■ Richardson RFPD Inc. www.richardsonrfpd.com S-Band GaN Amplifiers Target RADAR RFMW Ltd. announced design and sales support for a dual, low noise amplifier (LNA) from Qorvo. The TQL9066 incorporates two, matched, E-pHEMT LNAs enabling balanced amplifier configurations with noise figure rated at 0.6 dB. Appli cable for the first stage in receivers, the Qorvo TQL9066 finds homes in BTS transceivers, L-Band radios and tower mounted amplifiers operating from 0.05 to 1.5 GHz. The Qorvo dual LNA offers shutdown capability important to TDD systems and high gain (>18 dB) for improved receive performance. The TQL9066 draws only 55 mA from a 4.35 V supply and is housed in a 4 x 4 mm package. ■ RFMW Ltd. info@rfmw.com www.rfmw.com Richardson RFPD Inc. announced the availability and full design support capabilities for a new 2.8 - 3.2 GHz 50 Watt GaN Amplifier from Qorvo. The QPA1000 is a high-power, S-band amplifier fabricated on Qorvo’s QGaN25 0.25 µm GaN on SiC production process. Covering 2.8 - 3.2 GHz, the QPA1000 provides greater than 47 dBm of saturated output power and greater than 24 dB of large-signal gain, while achieving more than 58% power added efficiency. The versatile QPA1000 can also support a variety of operating conditions and system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications. The QPA1000 is matched to 50 ohms, with integrated DC blocking caps on both I/O ports. It is ideal for use in commercial and military radar systems. According to Qorvo, key features of the QPA1000 include: RFMW Ltd. announced design and sales support for the Qorvo TGA2813-SM, a 3.1 to 3.6 GHz GaN amplifier providing 100 W of saturated output power. With 24 dB of large signal gain and power added efficiency of 56%, the TGA2813-SM is ideal for commercial and military radar systems. The small, surface mount package measures 7 x 9 mm and is housed in a plastic QFN. Bias requirements are only 300 mA from a 30 V supply. Both RF ports have integrated DC 42 hf-praxis 9/2016

RF & Wireless New X-Band GaN Power Amplifiers Richardson RFPD announced the availability and full design support capabilities for two new X-band GaN power amplifiers from Qorvo. The TGA2622- SM and TGA2624-SM operate from 9 to 10 GHz and are offered in 7 x 7 mm aircavity, laminate-based QFN packages. For blocking capacitors and are fully matched to 50 ohms. Associated Qorvo GaN amplifiers offer a full range of S-band RADAR power options. • TGA2813-SM 3.1 to 3.6 GHz, 100 W • TGA2814-SM 3.1 to 3.5 GHz, 80 W • TGA2817-SM 2.9 to 3.5 GHz, 60 W • TGA2818-SM 2.8 to 3.7 GHz, 30 W ■ RFMW Ltd. info@rfmw.com www.rfmw.com 1 kW LDMOS Avionics Power Transistor RFMW Ltd. announced design and sales support for a 1000 Watt pulsed power transistor. Ampleon’s BLA6H0912LS-1000 offers excellent ruggedness for avionics applications such as Mode-S, TCAS, JTIDS, DME and TACAN applications in the 960 to 1215 MHz frequency range. The BLA6H0912LS-1000 has integrated ESD protection and excellent thermal stability. It is highly flexible with respect to pulse formats with typical rise and fall times of 11 and 5 ns respectively. Typical gain is 16 dB. Ampleon’s BLA6H0912LS-1000 both devices, the RF ports are internally DC blocked and matched to 50 ohms, enabling simple system integration. Ideally suited for pulsed applications, the new GaN power amplifiers offer superior power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems. The TGA2622-SM typically generates 35 W of saturated output power with a power-added efficiency greater than 42% and 27.5 dB of large signal gain. The TGA2624-SM typically generates 20 W of saturated output power with a poweradded efficiency greater than 40% and 25 dB of large signal gain. ■ Richardson RFPD Inc. www.richardsonrfpd.com runs off a 50 V supply drawing 200 mA. Drain efficiency is specified at 51%. Ampleon offers detailed test reports, modeling information and PCB design support for their power transistors. ■ RFMW Ltd. info@rfmw.com www.rfmw.com Low-Drift BAW for Band 40 RFMW Ltd. announced design and sales support for the Qorvo 885075 BAW filter featuring LowDrift technology. LowDrift BAW filters have dramatically reduced temperature sensitivity resulting in improved insertion loss, longer battery life, and fewer service interruptions in final designs. The Qorvo 885075 is highly selective for B40 applications from 2300-2400 MHz and offers excellent W-Fi rejection. Insertion loss is 3 dB and WiFi attenuation is specified at 34 dB. Operating over a temperature range of -20 to 85 °C, the 885075 is offered in a 1.1 x 0.9 mm SMT package. ■ RFMW Ltd. info@rfmw.com www.rfmw.com Test & Measurement Validation of Rel-9 Dual Band, Dual Carrier HSDPA RF Test Cases Keysight Technologies announced that the Global Certification Forum (GCF) has ratified in their latest CAG#46 meeting, the validation of Keysight release 9 dual band and dual carrier HSDPA test cases in the bands I-VIII. Through this recognition, Keysight becomes the only vendor to offer validated test cases on this evolution of 3G technology, for which some mobile network operators have already announced deployments in 2016. “We are pleased to be the first cellular industry test solutions provider to achieve validation of this dual band and dual carrier HSDPA technology test cases,” said Garrett Lees, senior director of Operator and Test Labs Solutions, Keysight. “This latest accomplishment builds on other recent announcements demonstrating our leadership in LTE 3CA technology solutions. We look forward to building on our track record of being first to provide the industry with the test solutions required to bring the latest technologies to market.” While earlier dual cell HSDPA technology allowed aggregation of two adjacent downlink carriers, the dual band and dual cell HSDPA technology offers the advantage of allowing non-contiguous downlink carrier aggregation. This makes deployment easier given that network operators may have their spectrum resource allocated into separated bands. The aggregation of downlink carriers offers a higher peak data rate resulting in an enhanced service to 3G networks subscribers as they use their mobile data applications. The test resources recently validated by Keysight provide network operators with the ability to test their radio frequency compliance against industry test plans and thus ensure a secure and smooth user experience. Keysight offers a wide range of solutions for 2G, 3G, LTE and LTE advance technologies that covers the needs of device designers, labs and networks operators. Additional information is available at 5G mobile communications technologies. ■ Keysight Technologies Inc. www.keysight.com hf-praxis 9/2016 43

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